Chinese name: Aluminum nitride
Pinyin: dà n huà lǚ
English name: alumin(i)um nitride
Aluminum nitride formula: AlN
Molecular weight: 40.99
Density: 3.235g/cm3
Description: AlN is an atomic crystal, which is a diamond-like nitride and can be stabilized up to 2200 °C. The room temperature is high and the strength decreases slowly with increasing temperature. It has good thermal conductivity and small thermal expansion coefficient, and is a good thermal shock resistant material. It has strong ability to resist molten metal erosion and is an ideal tantalum material for casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties and is also promising for use as an electrical component.
The aluminum nitride coating on the gallium arsenide surface protects it from ion implantation during annealing. Aluminum nitride is also a catalyst for converting hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder in an ammonia or nitrogen atmosphere at 800~1000 °C. The product is white to gray-blue powder. Or the synthesis is carried out by the Al2O3-C-N2 system at 1600~1750 °C, and the product is an off-white powder. Or aluminum chloride and ammonia are obtained by gas phase reaction. The coating can be synthesized by vapor phase deposition from an AlCl3-NH3 system.
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